Microwave plasma CVD apparatus with a deposition chamber having a circumferential wall comprising a curved moving substrate web and a microwave applicator means having a specific dielectric member on the exterior thereof
US5514217A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1994 |
| Grant date | May 7, 1996 |
| Priority date | — |
| Expiry date | Jun 7, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for continuously forming a functional deposited film on a continuously moving web member by microwave plasma CVD process, said apparatus comprises: a substantially enclosed columnar film-forming chamber having a curved circumferential wall formed by curving and projecting said web member as said web member is moving in the longitudinal direction by curved portion-forming means, said film-forming chamber having a film-forming space defined by a curved moving web member constituting said circumferential in which plasma is generated; at least a microwave applicator means capable of radiating a microwave energy in the direction of microwave to propagate, said microwave applicator means being mounted to said film forming chamber through one of the two side faces thereof such that part of said microwave applicator means is plunged into said film-forming space, at least said part of microwave applicator means having a dielectric exterior constituted by a dielectric material having a value of 2.times.10.sup.-2 or less in the product of the dielectric constant (.epsilon.) and the dielectric dissipation factor (tan .delta.) with respect to the frequency of microwave used;means f…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.