Phase shifting mask comprising a multilayer structure and method of forming a pattern using the same
US5514499A · kind A · utility
32Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 1994 |
| Grant date | May 7, 1996 |
| Priority date | — |
| Expiry date | May 25, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/32
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflection phase shifting mask used to expose a pattern by forming reflected light having a phase difference upon reflection of light, includes a substrate for reflecting exposure light, a phase shifting layer formed on a portion on the substrate, and a light transmitting medium formed on the substrate and the phase shifting layer, wherein the thickness of the phase shifting layer is set such that the phase difference between light reflected by the substrate and light reflected by the phase shifting layer becomes 180.degree..
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.