Soichi Inoue
118Patents
20h-index
103Co-inventors
93Inventor score
Filing activity: Oct 13, 1982 → Aug 30, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6077310A | Optical proximity correction system | Emerging Cross-Sectional Technologies | 347 | Expired |
| US7120882B2 | Method of setting process parameter and method of setting process parameter and/or design rule | Electricity | 210 | Expired |
| US5879844A | Optical proximity correction method | Emerging Cross-Sectional Technologies | 155 | Expired |
| US5673103A | Exposure apparatus and method | Physics | 124 | Expired |
| US7230680B2 | Wafer flatness evaluation method, wafer flatness evaluation apparatus carrying out the evaluation method, wafer manufacturing method using the evaluation method, wafer quality assurance method using the evaluation method, semiconductor device manufacturing method using the evaluation method and semiconductor device manufacturing method using a wafer evaluated by the evaluation method | Electricity | 104 | Expired |
| US5627626A | Projectin exposure apparatus | Physics | 85 | Expired |
| US5621498A | Projection exposure apparatus | Physics | 81 | Expired |
| US5707501A | Filter manufacturing apparatus | Physics | 68 | Expired |
| US5429730A | Method of repairing defect of structure | Physics | 56 | Expired |
| US5422205A | Micropattern forming method | Physics | 50 | Expired |
| US6376139B1 | Control method for exposure apparatus and control method for semiconductor manufacturing apparatus | Physics | 34 | Expired |
| US7194704B2 | Design layout preparing method | Electricity | 33 | Expired |
| US6316163A | Pattern forming method | Electricity | 32 | Expired |
| US5514499A | Phase shifting mask comprising a multilayer structure and method of forming a pattern using the same | Physics | 32 | Expired |
| US6440616B1 | Mask and method for focus monitoring | Physics | 30 | Expired |
| US5639699A | Focused ion beam deposition using TMCTS | Physics | 28 | Expired |
| US6567972B1 | Method and apparatus for correcting mask pattern, mask having corrected mask pattern, and storage medium storing program for executing the method for correcting mask pattern | Physics | 25 | Expired |
| US7353145B2 | Method for correcting a mask pattern, a computer program product, a method for producing a photomask, and method for manufacturing a semiconductor device | Physics | 23 | Expired |
| US5889678A | Topography simulation method | Physics | 20 | Expired |
| US6701512B2 | Focus monitoring method, exposure apparatus, and exposure mask | Physics | 20 | Expired |
| US6226074A | Exposure monitor mask, exposure adjusting method and method of manufacturing semiconductor devices | Physics | 20 | Expired |
| US6423977B1 | Pattern size evaluation apparatus | Physics | 20 | Expired |
| US7181707B2 | Method of setting process parameter and method of setting process parameter and/or design rule | Electricity | 19 | Expired |
| US6340542B1 | Method of manufacturing a semiconductor device, method of manufacturing a photomask, and a master mask | Physics | 18 | Expired |
| US6317198A | Method of examining an exposure tool | Physics | 16 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.