Gap light emitting device having a low carbon content in the substrate
US5514881A · kind A · utility
1Cited by
1References
4Claims
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Key dates
| Filing date | Jan 23, 1995 |
| Grant date | May 7, 1996 |
| Priority date | — |
| Expiry date | Jan 23, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8242
Abstract
A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP single crystal substrate is more than 1.0.times.10.sup.16 atoms/cc, but less than 1.0.times.10.sup.17 atoms/cc. The n-type GaP single crystal substrate is obtained from an n-type GaP single crystal grown by the Liquid Encapsulation Czochralski method wherein B.sub.2 O.sub.3 containing water corresponding to 200 ppm or more is used as an encapsulation liquid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.