Semiconductor device with monocrystalline gate insulating film
US5514904A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1994 |
| Grant date | May 7, 1996 |
| Priority date | — |
| Expiry date | Aug 26, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
A semiconductor device includes a monocrystalline silicon substrate, an insulating film consisting of a monocrystalline silicon oxide formed on the surface of the monocrystalline silicon substrate, and a conductive film formed on the insulating film. The monocrystalline silicon substrate has a (100) plane orientation, the insulating film essentially consists of .beta.-cristobalite having a unit structure in a P4.sub.1 2.sub.1 2 structural expression in such a manner that every other silicon atoms of four silicon atoms aligned about a C-axis are arranged on two adjacent silicon atoms aligned in a 110! direction on an Si (100) plane, and that a plane including the C-axis of the .beta.-cristobalite and the 110! direction is set perpendicular to the (100) plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.