Method for manufacturing a micro-electronic component having an electrically conductive tip of doped silicon

US5516404A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Ignaz Eisele · Icking, DE
• Harald Gossner · Riemerling, DE
• Hermann Baumgaertner · Munich, DE
• Lothar Risch · Neubiberg, DE

Key dates

• Filing date: Jul 15, 1994
• Grant date: May 14, 1996
• Expiry date: Jul 15, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2201/30426
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for manufacturing an electrically conductive tip for field emission cathodes of vacuum electronic components includes forming the tip of doped silicon by molecular beam epitaxy of doped silicon through an opening of a mask and onto a substrate of monocrystalline silicon. The molecular beam epitaxy also produces a doped silicon layer on the surface of the mask.