Lothar Risch
55Patents
20h-index
48Co-inventors
88Inventor score
Filing activity: Jul 22, 1980 → Jul 30, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6600200B1 | MOS transistor, method for fabricating a MOS transistor and method for fabricating two complementary MOS transistors | Electricity | 124 | Expired |
| US6459123B1 | Double gated transistor | Electricity | 96 | Expired |
| US5710072A | Method of producing and arrangement containing self-amplifying dynamic MOS transistor memory cells | Electricity | 87 | Expired |
| US4823180A | Photo-transistor in MOS thin-film technology and method for production and operation thereof | Electricity | 78 | Expired |
| US6229169A | Memory cell configuration, method for fabricating it and methods for operating it | Electricity | 74 | Expired |
| US5973373A | Read-only-memory cell arrangement using vertical MOS transistors and gate dielectrics of different thicknesses and method for its production | Electricity | 72 | Expired |
| US5959328A | Electrically programmable memory cell arrangement and method for its manufacture | Electricity | 61 | Expired |
| US4331709A | Process of reducing density of fast surface states in MOS devices | Emerging Cross-Sectional Technologies | 50 | Expired |
| US5443992A | Method for manufacturing an integrated circuit having at least one MOS transistor | Electricity | 45 | Expired |
| US5817552A | Process of making a dram cell arrangement | Electricity | 40 | Expired |
| US5998261A | Method of producing a read-only storage cell arrangement | Electricity | 33 | Expired |
| US6351408B1 | Memory cell configuration | Electricity | 32 | Expired |
| US6490190B1 | Memory cell configuration, magnetic ram, and associative memory | Physics | 24 | Expired |
| US7368752B2 | DRAM memory cell | Electricity | 23 | Expired |
| US5327374A | Arrangement with self-amplifying dynamic MOS transistor storage cells | Electricity | 23 | Expired |
| US5828076A | Microelectronic component and process for its production | Electricity | 22 | Expired |
| US5736761A | DRAM cell arrangement and method for its manufacture | Electricity | 21 | Expired |
| US6262448A | Memory cell having trench capacitor and vertical, dual-gated transistor | Electricity | 20 | Expired |
| US5920778A | Read-only memory cell arrangement and method for its production | Electricity | 20 | Expired |
| US6614069B2 | Nonvolatile semiconductor memory cell and method for fabricating the memory cell | Electricity | 20 | Expired |
| US6362502B1 | DRAM cell circuit | Electricity | 19 | Expired |
| US6255684A | DRAM cell configuration and method for its production | Electricity | 17 | Expired |
| US6300652A | Memory cell configuration and method for its production | Electricity | 12 | Expired |
| US5844834A | Single-electron memory cell configuration | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5559353A | Integrated circuit structure having at least one CMOS-NAND gate and method for the manufacture thereof | Electricity | 11 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.