Method of fabricating radiation imager with single passivation dielectric for transistor and diode
US5516712A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1994 |
| Grant date | May 14, 1996 |
| Priority date | — |
| Expiry date | Oct 28, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
A radiation imager includes a photosensor array having a plurality of individually addressable pixels, each pixel having a photosensor island and an associated thin film transistor (TFT) disposed to selectively electrically couple the photosensor island to a predetermined address line. In each pixel a single common passivation layer is disposed over the TFT and the photosensor island such that the passivation layer is adjacent to both the outer surfaces of the TFT and portions of the photosensor island. In a method of fabricating a photosensor array as described above, after depositon of a source-drain metal layer, the layer is left unpatterned until after the photosensor island has been formed. In the formation of the photosensor island the source-drain metal layer serves as an etch stop to protect the TFT. Following formation of the photosensor island, the source-drain metal layer is patterned to form source and drain electrodes and fabrication of the TFT is completed. The single common passivation layer is then deposited over both the TFT and the photosensor island.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.