Method for detecting and examining slightly irregular surface states, scanning probe microscope therefor, and method for fabricating a semiconductor device or a liquid crystal display device using these
US5517027A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1994 |
| Grant date | May 14, 1996 |
| Priority date | — |
| Expiry date | Jun 6, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/868
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Method for detecting and examining a slightly irregular surface state is provided which includes the steps of: illuminating a surface of a sample with light beam for detecting the slightly irregular surface state; observing a variation of the light beam occurring due to the slightly irregular surface state to specify the location of the slightly irregular surface state in an x-y plane of the sample; making the location of a probe needle of a scanning probe microscope and the location of the slightly irregular surface state on the sample coincide with each other; and measuring a three-dimensional image of the slightly irregular surface state by means of the scanning probe microscope. The scanning probe microscope for use in the aforementioned method and a method for fabricating a semiconductor device or a liquid crystal display device which utilizes the aforementioned method are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.