Memory with multiple erase modes
US5517453A · kind A · utility
8Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 1994 |
| Grant date | May 14, 1996 |
| Priority date | — |
| Expiry date | Sep 15, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electrically-erasable, electrically programmable read-only memory (EEPROM) with multiple erase modes identifies sections of memory cells that have not received a write operation subsequent to the most recent erase operation and inhibits erasure of the memory cells in such sections. An indicator column is formed from indicator memory cells added to each section. During a write operation in which a section is first erased and then programmed, the EEPROM reads the indicator memory cell added to the section and inhibits the erase of the section if the memory cells in the section are in an erased state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.