Robert J. Strain
26Patents
11h-index
17Co-inventors
72Inventor score
Filing activity: Oct 7, 1974 → Jun 22, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5729075A | Tuneable microelectromechanical system resonator | Physics | 204 | Expired |
| US7683433B2 | Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors | Electricity | 41 | Active |
| US7898297B2 | Method and apparatus for dynamic threshold voltage control of MOS transistors in dynamic logic circuits | Electricity | 28 | Active |
| US4585299A | Process for fabricating optical wave-guiding components and components made by the process | Physics | 26 | Expired |
| US4480199A | Identification of repaired integrated circuits | Electricity | 18 | Expired |
| US6590797B1 | Multi-bit programmable memory cell having multiple anti-fuse elements | Physics | 17 | Expired |
| US5912779A | Method of reading and writing data on a magnetic medium | Physics | 16 | Expired |
| US4603471A | Method for making a CMOS circuit having a reduced tendency to latch by controlling the band-gap of source and drain regions | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5453389A | Defect-free bipolar process | Emerging Cross-Sectional Technologies | 12 | Expired |
| US4559696A | Ion implantation to increase emitter energy gap in bipolar transistors | Electricity | 11 | Expired |
| US7544557B2 | Gate defined Schottky diode | Electricity | 11 | Active |
| US4347656A | Method of fabricating polysilicon electrodes | Electricity | 9 | Expired |
| US5517453A | Memory with multiple erase modes | Physics | 8 | Expired |
| US4728998A | CMOS circuit having a reduced tendency to latch | Electricity | 8 | Expired |
| US6809948B2 | Mask programmable read-only memory (ROM) cell | Physics | 7 | Expired |
| US8048732B2 | Method for reducing leakage current and increasing drive current in a metal-oxide semiconductor (MOS) transistor | Electricity | 6 | Active |
| US5426539A | Multiple gap read/write head for data storage devices | Physics | 5 | Expired |
| US5644457A | Multiple gap read/write head for data storage devices | Physics | 5 | Expired |
| US7485941B2 | Cobalt silicide schottky diode on isolated well | Electricity | 2 | Active |
| US3935477A | Analog inverter for use in charge transfer apparatus | Electricity | 2 | Expired |
| US9847404B2 | Fluctuation resistant FinFET | Electricity | 2 | Active |
| US11373696B1 | FFT-dram | Physics | 1 | Active |
| US8247840B2 | Apparatus and method for improved leakage current of silicon on insulator transistors using a forward biased diode | Electricity | 1 | Active |
| US7863689B2 | Apparatus for using a well current source to effect a dynamic threshold voltage of a MOS transistor | Electricity | 0 | Active |
| US11894039B2 | FFT-DRAM | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.