High growth rate plasma diamond deposition process and method of controlling same
US5518759A · kind A · utility
8Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 1995 |
| Grant date | May 21, 1996 |
| Priority date | — |
| Expiry date | Jan 23, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/277
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for depositing diamond on a substrate using a microwave plasma generator including introducing a feed which includes diamond forming constituents in a desired ratio to the microwave plasma generator, and providing sufficient microwave power to the microwave plasma generator to produce a greenish-colored plasma which emits a spectrum monitored to maintain a relative emission intensity ratio of two of the constituents in a predetermined range, for depositing high quality diamond at an extremely high rate on the substrate placed proximate or in the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.