Method of isolating vertical shorts in an electronic array using laser ablation
US5518956A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 1993 |
| Grant date | May 21, 1996 |
| Priority date | — |
| Expiry date | Sep 2, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/94
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for repairing an electronic army wafer assembly having a short circuit between two non-insulative layers separated by a dielectric layer includes the step of selectively ablating one of the non-insulative layers so as to electrically isolate the situs of the short circuit while maintaining the electrical integrity of the underlying non-insulative layer intact. A laser beam is directed onto the non-insulative layer and scanned in a selected pattern to isolate the situs of the short circuit; the laser is further controlled such that a selected energy density is delivered to the surface to be ablated such that the underlying non-insulative layer is not damaged.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.