Voltage regulator for programming non-volatile and electrically programmable memory cells
US5519656A · kind A · utility
27Cited by
6References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1994 |
| Grant date | May 21, 1996 |
| Priority date | — |
| Expiry date | Dec 29, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/147
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A voltage regulator for programming non-volatile memory cells, which comprises an amplifier stage being powered between a first and a second voltage reference and having a first input terminal connected to a resistive divider of the first reference voltage and an output terminal fed back to said input through a current mirror, and a source-follower transistor controlled by the output and connected to the cells through a programming line. Also provided is a MOS transistor which connects to ground the programming line and a corresponding resistive path connected between the current mirror and the second voltage reference.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.