Marco Maccarrone
42Patents
12h-index
23Co-inventors
81Inventor score
Filing activity: Nov 28, 1994 → Aug 31, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5805500A | Circuit and method for generating a read reference signal for nonvolatile memory cells | Physics | 70 | Expired |
| US5955873A | Band-gap reference voltage generator | Emerging Cross-Sectional Technologies | 32 | Expired |
| US5519656A | Voltage regulator for programming non-volatile and electrically programmable memory cells | Physics | 27 | Expired |
| US5886925A | Read circuit and method for nonvolatile memory cells with an equalizing structure | Physics | 24 | Expired |
| US5659509A | Method for programming redundancy registers in a row redundancy integrated circuitry for a semiconductor memory device, and row redundancy integrated circuitry | Physics | 24 | Expired |
| US5650671A | Charge pump circuit | Physics | 24 | Expired |
| US6031761A | Switching circuit having an output voltage varying between a reference voltage and a negative voltage | Physics | 21 | Expired |
| US5548554A | Integrated programming circuitry for an electrically programmable semiconductor memory device with redundancy | Physics | 20 | Expired |
| US5563826A | Memory array cell reading circuit with extra current branch | Physics | 20 | Expired |
| US5600594A | Threshold voltage measuring device for memory cells | Physics | 18 | Expired |
| US6266222A | ESD protection network for circuit structures formed in a semiconductor | Electricity | 15 | Expired |
| US8018771B2 | Fast programming memory device | Emerging Cross-Sectional Technologies | 13 | Active |
| US6507183B1 | Method and a device for measuring an analog voltage in a non-volatile memory | Physics | 9 | Expired |
| US5859797A | Biasing circuit for UPROM cells with low voltage supply | Physics | 9 | Expired |
| US5929674A | Power on reset circuit with auto turn off | Electricity | 9 | Expired |
| US6307396A | Low-consumption TTL-CMOS input buffer stage | Electricity | 8 | Expired |
| US5493531A | Integrated circuitry for checking the utilization rate of redundancy memory elements in a semiconductor memory device | Physics | 8 | Expired |
| US8582364B2 | Fast programming memory device | Emerging Cross-Sectional Technologies | 7 | Active |
| US5708601A | Integrated circuitry for checking the utilization rate of redundancy memory elements in a semiconductor memory device | Physics | 7 | Expired |
| US6157579A | Circuit for providing a reading phase after power-on-reset | Physics | 6 | Expired |
| US5546054A | Current source having voltage stabilizing element | Physics | 6 | Expired |
| US9281064B2 | Fast programming memory device | Emerging Cross-Sectional Technologies | 5 | Active |
| US5499217A | Bias circuit for a memory line decoder driver of nonvolatile memories | Physics | 5 | Expired |
| US8982627B2 | Fast programming memory device | Emerging Cross-Sectional Technologies | 5 | Active |
| US5532972A | Method and circuit for timing the reading of nonvolatile memories | Physics | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.