Process for continuously forming a large area functional deposited film by microwave PCVD method and apparatus suitable for practicing the same
US5520740A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1995 |
| Grant date | May 28, 1996 |
| Priority date | — |
| Expiry date | Jun 2, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for continuously forming a large area functional deposited film by a microwave plasma CVD process, said method comprises: continuously moving a substrate web in the longitudinal direction; establishing a substantially enclosed film-forming chamber having a film-forming space by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving; introducing a film-forming raw material gas through a gas feed means into said film-forming space; at the same time, radiating or propagating microwave energy into said film-forming space by using a microwave applicator means capable of radiating or propagating said microwave energy with a directivity in one direction of microwave energy to propagate to generate microwave plasma in said film-forming space, whereby continuously forming a functional deposited film on the inner face of said continuously moving circumferential wall to be exposed to said microwave plasma. An apparatus suitable for practicing said method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.