Microwave plasma processing apparatus
US5520771A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 1995 |
| Grant date | May 28, 1996 |
| Priority date | — |
| Expiry date | May 18, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a microwave plasma processing method and apparatus. More particularly, it relates to a microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.