Method for enhancing aluminum nitride
US5520785A · kind A · utility
48Cited by
9References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 1994 |
| Grant date | May 28, 1996 |
| Priority date | — |
| Expiry date | Jul 25, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/003
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for enhancing aluminum nitride includes, in one version, annealing sputtered aluminum nitride in a reducing atmosphere (11), and subsequently annealing the sputtered aluminum nitride in an inert atmosphere (12). A superior aluminum nitride thin film (13) results. The films can withstand exposure to boiling water for times up to twenty minutes and maintain a refractive index, N.sub.f, greater than 2.0, and a preferred crystalline orientation ratio, I(002)/I(102), in excess of 1000.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.