Electrodes for high dielectric constant materials
US5520992A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 1993 |
| Grant date | May 28, 1996 |
| Priority date | — |
| Expiry date | Jun 22, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Novel methods of forming capacitors containing high dielectric materials are disclosed. Capacitors are made by forming a layer of conductive metal nitride (e.g. ruthenium nitride, 28), then forming a layer of a high dielectric constant material (e.g. barium strontium titanate, 30) on the metal nitride layer, then forming a layer of a non-metal containing electrically conductive compound (e.g. ruthenium oxide, 32) on the layer of high dielectric constant material. Typically, the high dielectric constant material is a transition metal oxide, a titanate, a titanate doped with one or more rare earth elements, a titanate doped with one or more alkaline earth metals, or combinations thereof. Preferably, the conductive compound is ruthenium nitride, ruthenium dioxide, tin nitride, tin oxide, titanium nitride, titanium monoxide, or combinations thereof. The conductive compound may be doped to increase its electrical conductivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.