Semiconductor device having a solid metal wiring with a contact portion for improved protection
US5521413A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 23, 1994 |
| Grant date | May 28, 1996 |
| Priority date | — |
| Expiry date | Nov 23, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On the surface of a p-type semiconductor substrate, an n-type diffusion layer is formed. The diffusion layer is in contact with an aluminum wiring via a contact hole formed through an interlayer insulation layer to electrical connection. Immediately beneath the contact portion of the aluminum wiring, a contact n-type diffusion layer having higher impurity concentration than the n-type diffusion layer and having deeper junction depth. Outside of the contact n-type diffusion layer is surrounded by a low impurity concentration n well. With the construction, when an electrostatic pulse is applied to an external terminal connected to the shallow diffusion layer, junction breakdown of the diffusion layer can be successfully prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.