Dry etching process for semiconductor
US5522966A · kind A · utility
22Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 17, 1993 |
| Grant date | Jun 4, 1996 |
| Priority date | — |
| Expiry date | Nov 17, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming trenches on a surface of a semiconductor substrate by dry etching using a gas mixture. The gas mixture comprises; (1) an etchant gas comprising at least bromine which etches the semiconductor surface to form trenches, (2) a cleaning gas comprising a halogen which evaporates residue formed by the etching, and (3) a reactive gas, e.g. N.sub.2, capable of reacting with material formed during the etching and capable of controlling the inclination of the trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.