Method for forming a device isolation film of a semiconductor device
US5523255A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 1995 |
| Grant date | Jun 4, 1996 |
| Priority date | — |
| Expiry date | May 31, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/911
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a device isolation film of a semiconductor device, which includes the steps of forming a pad oxide film on a semiconductor substrate, forming an oxidation buffer layer on the pad oxide film, forming an oxidation prevention film on the oxidation buffer layer, forming an aperture in the oxidation prevention film and a longitudinally co-extensive recess in the oxidation buffer layer, to thereby expose a portion of the oxidation buffer layer, forming a cap oxide film on the exposed portion of the oxidation buffer layer by subjecting a first resultant structure obtained by the preceding steps to a thermal oxidation process, forming an oxynitride film at an interface between the cap oxide film and the oxidation buffer layer by heat-treating a second resultant structure obtained by the preceding steps in a nitrogen atmosphere, and, forming the device isolation film by subjecting a third resultant structure obtained by the preceding steps to a thermal oxidation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.