Hung-Mo Yang
13Patents
7h-index
12Co-inventors
63Inventor score
Filing activity: May 31, 1995 → Apr 24, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7217623B2 | Fin FET and method of fabricating same | Electricity | 20 | Expired |
| US5786265A | Methods of forming integrated semiconductor devices having improved channel-stop regions therein, and devices formed thereby | Electricity | 11 | Expired |
| US7868380B2 | Fin FET and method of fabricating same | Electricity | 11 | Active |
| US8264034B2 | Fin FET and method of fabricating same | Electricity | 9 | Active |
| US6365928B1 | Semiconductor memory storage electrode and method of making | Electricity | 8 | Expired |
| US5523255A | Method for forming a device isolation film of a semiconductor device | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7494895B2 | Method of fabricating a three-dimensional MOSFET employing a hard mask spacer | Electricity | 7 | Expired |
| US8053833B2 | Fin FET and method of fabricating same | Electricity | 5 | Active |
| US7436047B2 | Wafer having scribe lanes suitable for sawing process, reticle used in manufacturing the same, and method of manufacturing the same | Electricity | 2 | Active |
| US9196733B2 | Fin FET and method of fabricating same | Electricity | 0 | Active |
| US9640665B2 | Fin FET and method of fabricating same | Electricity | 0 | Active |
| US9018697B2 | fin FET and method of fabricating same | Electricity | 0 | Active |
| US9893190B2 | Fin FET and method of fabricating same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.