Semiconductor device having capacitor and manufacturing method therefor
US5523596A · kind A · utility
39Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 1995 |
| Grant date | Jun 4, 1996 |
| Priority date | — |
| Expiry date | Mar 14, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
Abstract
A capacitor includes a polycrystalline silicon layer 1 as a lower electrode layer, a dielectric layer 112, and a polycrystalline silicon layer 113 as an upper electrode layer. The dielectric layer 112 is formed by an oxynitride film 2, a silicon nitride film 3 and a top oxide film 4. A film thickness t.sub.3 of the top oxide film 4 is controlled to be less than 20 .ANG.. Capacitance of the capacitor can be increased while improving the duration of life of the dielectric layer, resulting in a highly reliable capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.