Method for protecting gallium arsenide mmic air bridge structures
US5524339A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 1994 |
| Grant date | Jun 11, 1996 |
| Priority date | — |
| Expiry date | Sep 19, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49146
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for preserving an air bridge structure on an integrated circuit chip, a protective layer is plasma-deposited over the top and sides of the air bridge. A high density interconnect structure is applied over the chip and protective layer. The protective film provides mechanical strength during the application of the high density interconnect structure to prevent deformation. It also prevents any contamination from intruding under the air bridge. More importantly, the protective film only negligibly impedes the performance of the air bridge and therefore does not need to be removed, thereby eliminating the necessity of ablating the HDI structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.