SOI DRAM with field-shield isolation
US5525531A · kind A · utility
41Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1995 |
| Grant date | Jun 11, 1996 |
| Priority date | — |
| Expiry date | Jun 5, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
An SOI deep-trench DRAM having body contacts and field shield isolation makes contact between the SOI device layer and a buried conductive layer below the insulating layer at selected sites between adjacent deep trench capacitors. The buried layer may be biased to provide better attraction for holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.