High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields

US5525828A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Ernest Bassous · The Bronx, US
• Jean-Marc Halbout · Larchmont, US
• Subramanian S. Iyer · Yorktown Heights, US
• Rajiv V. Joshi · Yorktown Heights, US
• Vijay P. Kesan · Croton-on-Hudson, US
• Michael R. Scheuermann · Katonah, US
• Massimo Ghioni · Peekskill, US

Key dates

• Filing date: Aug 23, 1994
• Grant date: Jun 11, 1996
• Expiry date: Aug 23, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/957

Abstract

Silicon-VLSI-compatible photodetectors, in the form of a metal-semiconductor-metal photodetector (MSM-PD) or a lateral p-i-n photodetector (LPIN-PD), are disclosed embodying interdigitated metallic electrodes on a silicon surface. The electrodes of the MSM-PD have a moderate to high electron and hole barrier height to silicon, for forming the Schottky barriers, and are fabricated so as to be recessed in the surface semiconducting layer of silicon through the use of self-aligned metallization either by selective deposition or by selective reaction and etching, in a manner similar to the SALICIDE concept. Fabrication is begun by coating the exposed Si surface of a substrate with a transparent oxide film, such that the Si/oxide interface exhibits low surface recombination velocity. The interdigitated pattern is then etched through the oxide film by lithography to expose the Si surface and metallic electrode members are formed selectively in the exposed Si surface, using self-aligned metallization to produce thin interdigitated electrodes recessed below the silicon surface, which itself may be on a comparatively thin Si layer. The electrodes may be spaced to minimize the interdigital c…