Process for making a semiconductor MOS transistor using a fluid material
US5527719A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1994 |
| Grant date | Jun 18, 1996 |
| Priority date | — |
| Expiry date | Dec 16, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/944
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for formation of an MOS semiconductor device having an LDD structure is disclosed, which may include the steps of: forming an active region and an isolation region on a semiconductor substrate; forming a first insulating layer on the surface of the substrate; forming a gate electrode on the first insulating layer in the active region; foxing a layer of a heat sensitive fluid material on the gate electrode; carrying out a first ion implantation into the substrate; carrying out a first heat treatment on the heat sensitive layer; carrying out a second ion implantation into the substrate; removing the residual fluid material; forming a second insulating layer on the whole surface of the wafer; and carrying out a second heat treatment on the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.