Method of forming a capacitor having contact hole treated with hydrogen atoms and energy beam
US5527730A · kind A · utility
10Cited by
10References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 1995 |
| Grant date | Jun 18, 1996 |
| Priority date | — |
| Expiry date | Apr 19, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.