Semiconductor sensor manufactured through anodic-bonding process
US5528070A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 6, 1994 |
| Grant date | Jun 18, 1996 |
| Priority date | — |
| Expiry date | Oct 6, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0042
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor sensor comprising a semiconductor substrate and a glass substrate. The semiconductor substrate includes a support member having an opening centrally defined therein, a diaphragm positioned in the opening of the support member, and a flexible supporting means for supporting and coupling the diaphragm and the support member. The glass substrate includes a portion facing the diaphragm and the supporting means and at least one recess defined in this portion which faces the entirety of the supporting means. The glass substrate also includes a metal layer deposited on a surface of the glass substrate and a dielectric layer deposited on the metal layer such that the dielectric layer faces the diaphragm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.