Semiconductor light intensity modulator
US5528413A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 11, 1994 |
| Grant date | Jun 18, 1996 |
| Priority date | — |
| Expiry date | Jan 11, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/255
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light intensity modulator utilizing the electric field absorbing effect, includes a light absorption layer which absorbs light due to the electric field absorption effect and a phase correcting semiconductor layer to which an electric field is applied independently from the light absorption layer, having a larger energy band gap than that of the light absorption layer disposed in the light waveguide path or in the vicinity thereof, of the semiconductor light intensity modulator. In this construction, by adjusting the refractive index of the phase correcting semiconductor layer and the length of the light waveguide path, the change in the refractive index in the light absorption layer can be cancelled, whereby a semiconductor light intensity modulator free of phase modulation is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.