Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element
US5528440A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 1994 |
| Grant date | Jun 18, 1996 |
| Priority date | — |
| Expiry date | Jul 26, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An improved spin valve (SV) magnetoresistive element has its free ferromagnetic layer in the form of a central active region with defined edges and end regions that are contiguous with and abut the edges of the central active region. A layer of antiferromagnetic material, preferably a nickel-manganese (Ni--Mn) alloy, is formed on and in contact with the ferromagnetic material in the end regions for exchange coupling with the end regions to provide them with a longitudinal bias of their magnetizations. The pinned ferromagnetic layer in the SV element is pinned by exchange coupling with a different layer of antiferromagnetic material, preferably an iron-manganese (Fe--Mn) alloy. This material has a substantially different Neel temperature from that of the antiferromagnetic material on the end regions. The process for making the SV element includes heating to different predetermined temperatures in the presence of an applied magnetic field to orient the magnetizations of the free and pinned layers in the proper direction. The SV element may be used as a sensor for reading data in magnetic recording systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.