Method of producing exchange coupled magnetic thin films with post-deposition annealing
US5529814A · kind A · utility
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Key dates
| Filing date | Oct 19, 1995 |
| Grant date | Jun 25, 1996 |
| Priority date | — |
| Expiry date | Oct 19, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/84
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Exchange coupled magnetic thin films are produced by depositing an antiferromagnetic layer, followed by deposition of a layer of ferromagnetic material on the antiferromagnetic layer. The composite antiferromagnetic/ferromagnetic structure is then annealed at an elevated temperature for a predetermined length of time. This process results in considerably higher exchange coupling fields than obtainable before. Alternatively, the antiferromagnetic layer may be annealed prior to deposition of the ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.