Hua-Ching Tong
33Patents
25h-index
48Co-inventors
81Inventor score
Filing activity: Jul 10, 1992 → Dec 8, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6317297A | Current pinned dual spin valve with synthetic pinned layers | Physics | 171 | Expired |
| US6351355B1 | Spin valve device with improved thermal stability | Physics | 166 | Expired |
| US6185077A | Spin valve sensor with antiferromagnetic and magnetostatically coupled pinning structure | Physics | 165 | Expired |
| US6639291B1 | Spin dependent tunneling barriers doped with magnetic particles | Electricity | 160 | Expired |
| US6618223B1 | High speed, high areal density inductive writer | Emerging Cross-Sectional Technologies | 157 | Expired |
| US6661625B1 | Spin-dependent tunneling sensor with low resistance metal oxide tunnel barrier | Physics | 157 | Expired |
| US6073338A | Thin film read head with coplanar pole tips | Emerging Cross-Sectional Technologies | 156 | Expired |
| US6430806B1 | Method for manufacturing an inductive write element employing bi-layer photoresist to define a thin high moment pole pedestal | Emerging Cross-Sectional Technologies | 155 | Expired |
| US6747301B1 | Spin dependent tunneling barriers formed with a magnetic alloy | Electricity | 154 | Expired |
| US6888184B1 | Shielded magnetic ram cells | Electricity | 154 | Expired |
| US7110289B1 | Method and system for controlling MRAM write current to reduce power consumption | Physics | 153 | Expired |
| US6166891A | Magnetoresistive sensor for high temperature environment using iridium manganese | Physics | 152 | Expired |
| US6650503B1 | Inductive write head including a thin high moment pedestal having a tapered edge | Emerging Cross-Sectional Technologies | 152 | Expired |
| US6459552B1 | Thin film read head with coplanar pole tips | Emerging Cross-Sectional Technologies | 151 | Expired |
| US7007372B1 | Method for making high speed, high areal density inductive write structure | Emerging Cross-Sectional Technologies | 151 | Expired |
| US6424507B1 | Spin valve magnetoresistive sensor for high temperature environment using iridium manganese | Physics | 151 | Expired |
| US6392850B1 | Magnetoresistive transducer having a common magnetic bias using assertive and complementary signals | Physics | 150 | Expired |
| US6137661A | System for providing a magnetoresistive head having higher efficiency | Emerging Cross-Sectional Technologies | 148 | Expired |
| US6633464B2 | Synthetic antiferromagnetic pinned layer with Fe/FeSi/Fe system | Emerging Cross-Sectional Technologies | 147 | Expired |
| US6873547B1 | High capacity MRAM memory array architecture | Physics | 147 | Expired |
| US6468436B1 | Method and system for providing a magnetoresistive head having higher efficiency | Emerging Cross-Sectional Technologies | 147 | Expired |
| US5726841A | Thin film magnetic head with trimmed pole tips etched by focused ion beam for undershoot reduction | Physics | 70 | Expired |
| US5986978A | Read/write head and method for magnetic reading and magneto-optical writing on a data storage medium | Physics | 64 | Expired |
| US5705973A | Bias-free symmetric dual spin valve giant magnetoresistance transducer | Physics | 48 | Expired |
| US5612098A | Method of forming a thin film magnetic structure having ferromagnetic and antiferromagnetic layers | Emerging Cross-Sectional Technologies | 27 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.