Photoresist with a mixture of a photosensitive esterified resin and an o-naphthoquinone diazide compound
US5529880A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1995 |
| Grant date | Jun 25, 1996 |
| Priority date | — |
| Expiry date | Mar 29, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/023
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A photoresist that is a mixture of the esterification product of an o-quinonediazide compound and a novolak resin and a high molecular weight phenol having from 2 to 5 phenolic groups and at least 4 diazo naphthoquinone groups. The extent of esterification of the novolak resin is up to 20 percent of the hydroxyl groups and the degree of esterification of the phenol is at least 50 percent of the phenolic hydroxyl groups. The preferred novolak resins are the aromatic novolak resin that are the condensation product of a reactive phenol with a bis(hydroxymethyl)phenol or an aromatic aldehyde, each alone or in the presence of a reactive phenol.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.