Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation
US5529951A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 1994 |
| Grant date | Jun 25, 1996 |
| Priority date | — |
| Expiry date | Nov 1, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/093
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of forming a polycrystalline silicon thin film improved in crystallinity and a channel of a transistor superior in electrical characteristics by the use of such a polycrystalline silicon thin film. An amorphous silicon layer of a thickness preferably of 30 nm to 50 nm is formed on a substrate. Next, substrate heating is performed to set the amorphous silicon layer to preferably 350.degree. C. to 500.degree. C., more preferably 350.degree. C. to 450.degree. C. Then, at least the amorphous silicon layer is irradiated with laser light of an excimer laser energy density of 100 mJ/cm.sup.2 to 500 mJ/cm.sup.2, preferably 280 mJ/cm.sup.2 to 330 mJ/cm.sup.2, and a pulse width of 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5 J, preferably at least 10 J.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.