FET optical receiver using backside illumination, indium materials species
US5532173A · kind A · utility
17Cited by
11References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 14, 1994 |
| Grant date | Jul 2, 1996 |
| Priority date | — |
| Expiry date | Jul 14, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/135
Abstract
A photo FET device having a large area backside optical energy reception surface is disclosed. The photo FET device is fabricated in the source gate and drain upward configuration using a lattice determining surrogate substrate and a mesa-forming deep etch processing sequence and then inverted onto a new permanent substrate member and the surrogate substrate member removed in order to expose the active area backside optical energy reception surface. Fabrication of the device from two possible indium-inclusive semiconductor materials and a particular gate metal alloy is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.