Method for forming electron emitters
US5532177A · kind A · utility
25Cited by
14References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 7, 1993 |
| Grant date | Jul 2, 1996 |
| Priority date | — |
| Expiry date | Jul 7, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Electron emitters and a method of fabricating emitters which have a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters, and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.