Method of chemical mechanical polishing planarization of an insulating film using an etching stop
US5532191A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1994 |
| Grant date | Jul 2, 1996 |
| Priority date | — |
| Expiry date | Mar 23, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of planarizing an insuating film includes the steps of preparing a semiconductor substrate; treating an uneven surface of the substrate with an organic solvent; forming an insulating film on the thus-treated surface of the substrate by a chemical vapor deposition using an organic silicon compound as a raw material or depositing SOG, forming an etching stop film having a chemical mechanical polishing etching speed slower than that of the insulating film by depositing silicon oxide or silicon oxynitride by performing a chemical vapor deposition using an inorganic silicon compound as a raw material; and etching back at least a part of the insulating film formed on the uneven surface of the substrate by a chemical mechanical polishing process using the etching stop film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.