Method for forming insulating film
US5532193A · kind A · utility
9Cited by
6References
12Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 31, 1994 |
| Grant date | Jul 2, 1996 |
| Priority date | — |
| Expiry date | Oct 31, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for forming a BSG film by means of chemical vapor deposition, has an object which is to provide a film forming method making it possible to obtain a BSG film of high denseness and of low hygroscopicity even immediately after the film has been formed at a low temperature, and comprises a process of forming a borosilicate glass film (BSG film) on a substrate using a mixed gas of an organometallic compound having Si--O--B bond and ozone (O.sub.3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.