Heterojunction diode with low turn-on voltage
US5532486A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1995 |
| Grant date | Jul 2, 1996 |
| Priority date | — |
| Expiry date | Feb 13, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/916
Abstract
A high speed diode with a low forward-bias turn-on voltage is formed by a heterojunction between a layer of doped semiconductor material that has a narrow bandgap energy of not more than about 0.4 eV, and a layer of oppositely doped semiconductor material that has a substantially wider bandgap energy. The device operates with a lower turn-on voltage than has previously been attainable, despite lattice mismatches between the two materials that can produce strain and substantial lattice dislocations in the low bandgap material. The two materials are selected so that the valence and conduction band edge discontinuities at the heterojunction enable a forward carrier flow but block a reverse carrier flow across the junction under forward-bias conditions. Preferred material systems are InAs for the narrow bandgap material, InGaAs for the wider bandgap material and InP for the substrate, or AlSb for the wider bandgap material and GaSb for the substrate. A compositional grading can be provided at the heterojunction to reduce energy band spikes, and a region of low dopant concentration is included in the wider bandgap material to increase the diode's reverse-bias breakdown voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.