William E. Stanchina
15Patents
10h-index
20Co-inventors
68Inventor score
Filing activity: Nov 2, 1988 → Dec 24, 1998
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6229189A | Multi-function optoelectronic device structure | Electricity | 25 | Expired |
| US5665614A | Method for making fully self-aligned submicron heterojunction bipolar transistor | Emerging Cross-Sectional Technologies | 24 | Expired |
| US5322808A | Method of fabricating inverted modulation-doped heterostructure | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5098853A | Self-aligned, planar heterojunction bipolar transistor and method of forming the same | Electricity | 14 | Expired |
| US5365077A | Gain-stable NPN heterojunction bipolar transistor | Electricity | 14 | Expired |
| US5721503A | Flash analog-to-digital converter with latching exclusive or gates | Electricity | 13 | Expired |
| US5349201A | NPN heterojunction bipolar transistor including antimonide base formed on semi-insulating indium phosphide substrate | Electricity | 13 | Expired |
| US5532486A | Heterojunction diode with low turn-on voltage | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5404028A | Electrical junction device with lightly doped buffer region to precisely locate a p-n junction | Electricity | 11 | Expired |
| US5889487A | Flash analog-to-digital converter with latching exclusive or gates | Electricity | 10 | Expired |
| US5049522A | Semiconductive arrangement having dissimilar, laterally spaced layer structures, and process for fabricating the same | Emerging Cross-Sectional Technologies | 9 | Expired |
| US5159423A | Self-aligned, planar heterojunction bipolar transistor | Electricity | 8 | Expired |
| US5468659A | Reduction of base-collector junction parasitic capacitance of heterojunction bipolar transistors | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5920773A | Method for making integrated heterojunction bipolar/high electron mobility transistor | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5572049A | Multi-layer collector heterojunction transistor | Electricity | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.