MES field effect transistor possessing lightly doped drain
US5532507A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 22, 1994 |
| Grant date | Jul 2, 1996 |
| Priority date | — |
| Expiry date | Dec 22, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/357
Abstract
In a MESFET of this invention possessed of an LDD structure, a current control layer possessed of conduction type opposite to that of an active layer is formed below the active layer. In the part of this current control layer underlying a gate electrode, a low impurity concentration region destined to function as a channel region for a transistor is formed. Further, LDD regions are formed at both sides of the channel region. In the current control layer, the part underlying the channel region is kept at a low impurity concentration while the other parts underlying the LDD regions are kept at a higher impurity concentration than the part underlying the channel region. Thus, a MESFET possessed of an improved short channel effect and excellent high frequency characteristics is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.