Low frequency inductive RF plasma reactor
US5534231A · kind A · utility
93Cited by
12References
114Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 17, 1995 |
| Grant date | Jul 9, 1996 |
| Priority date | — |
| Expiry date | Jan 17, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32706
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma reactor with rf power inductively coupled into the reactor chamber to produce an rf magnetic field substantially perpendicular to a pedestal on which a wafer is placed for processing. Said pedestal is a powered electrode to which power is coupled to control the sheath voltage of the pedestal. This reactor is particularly suitable for soft etches and processes in which it is advantageous to couple much more power into ion production than into free radical production.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.