Method of manufacturing titanium silicide containing semiconductors
US5534453A · kind A · utility
3Cited by
5References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 2, 1993 |
| Grant date | Jul 9, 1996 |
| Priority date | — |
| Expiry date | Dec 2, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device having a titanium silicide layer comprises the steps of forming a silicon layer and titanium layer on a polysilicon layer, washing a surface of the silicon layer, and heat treating the titanium layer after washing to make the titanium layer a titanium silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.