Optoelectronic circuit including heterojunction bipolar transistor laser and photodetector
US5535231A · kind A · utility
16Cited by
1References
49Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 1994 |
| Grant date | Jul 9, 1996 |
| Priority date | — |
| Expiry date | Nov 8, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0264
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic integrated circuit furnishes a monolithic integration of high-speed transistors, lasers and photodetectors for optoelectronic communication applications. The monolithic device integrates an indium phosphorus (InP)/indium gallium arsenide (InGaAs) emitter-down heterojunction bipolar transistor with an InP/InGaAs quantum well laser and modulator, and a metal-semiconductor-metal photodetector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.