Method of making II-VI semiconductor infrared light detector
US5535699A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 1995 |
| Grant date | Jul 16, 1996 |
| Priority date | — |
| Expiry date | Apr 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02557
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a photo-voltaic infrared detector including growing a crystalline CdHgTe layer on a CdTe substrate by liquid phase epitaxy using a growth melt including tellurium as a solvent to which indium is added as a dopant impurity in a concentration of from 0.01 to 0.1 ppm; annealing the CdHgTe layer to produce a p-type CdHgTe layer including indium as an n-type background dopant impurity; forming an n-type region of a desired depth as a light receiving region at the surface of the p-type CdHgTe layer by implanting a dopant impurity producing n-type conductivity and annealing; and forming an n-side electrode on the n-type region and a p-side electrode a prescribed distance from the n-type region on the p-type CdHgTe layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.