Zempei Kawazu
17Patents
7h-index
28Co-inventors
66Inventor score
Filing activity: Dec 19, 1994 → Jun 15, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5739552A | Semiconductor light emitting diode producing visible light | Electricity | 466 | Expired |
| US5760426A | Heteroepitaxial semiconductor device including silicon substrate, GaAs layer and GaN layer #13 | Electricity | 115 | Expired |
| US5880485A | Semiconductor device including Gallium nitride layer | Electricity | 76 | Expired |
| US5764673A | Semiconductor light emitting device | Electricity | 38 | Expired |
| US5701321A | Semiconductor laser producing short wavelength light | Electricity | 26 | Expired |
| US5582647A | Material supplying apparatus | Chemistry; Metallurgy | 14 | Expired |
| US5539239A | Semiconductor light emitting element with II-VI and III-V compounds | Electricity | 9 | Expired |
| US5841156A | Semiconductor device including T1 GaAs layer | Electricity | 5 | Expired |
| US5535699A | Method of making II-VI semiconductor infrared light detector | Electricity | 5 | Expired |
| US9988738B2 | Method for manufacturing SiC epitaxial wafer | Electricity | 3 | Active |
| US9422640B2 | Single-crystal 4H-SiC substrate | Emerging Cross-Sectional Technologies | 1 | Active |
| US9824911B2 | Substrate support and semiconductor manufacturing apparatus | Electricity | 1 | Active |
| US9903048B2 | Single-crystal 4H-SiC substrate | Emerging Cross-Sectional Technologies | 0 | Active |
| US6737288B2 | Method for fabricating a semiconductor device | Electricity | 0 | Expired |
| US7151004B2 | Method of fabricating semiconductor laser | Electricity | 0 | Expired |
| US7378351B2 | Method of manufacturing nitride semiconductor device | Electricity | 0 | Expired |
| US9752254B2 | Method for manufacturing a single-crystal 4H—SiC substrate | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.