Parylene deposition apparatus including an atmospheric shroud and inert gas source
US5536319A · kind A · utility
26Cited by
11References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1995 |
| Grant date | Jul 16, 1996 |
| Priority date | — |
| Expiry date | Oct 27, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G2261/3424
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes an atmospheric shroud which envelopes the entire apparatus, and further includes an inert gas source for providing an inert atmosphere within the shroud. The purpose of the shroud and inert atmosphere is to exclude oxygen from the deposition chamber during vacuum evacuation and the subsequent coating cycle, thus allowing the coating process to be carried out in a substantially oxygen free environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.