Isolation structure formation for semiconductor circuit fabrication
US5536675A · kind A · utility
81Cited by
17References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 7, 1995 |
| Grant date | Jul 16, 1996 |
| Priority date | — |
| Expiry date | Aug 7, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The deposition of oxide over a semiconductor substrate to fill trenches provides for simpler isolation processing for semiconductor circuit fabrication. Both shallow and deep trenches are etched in a semiconductor substrate for the formation of both device isolation structures and well isolation structures. Oxide is then deposited using chemical vapor deposition over the substrate, filling both the shallow and deep trenches. The resulting oxide layer over the substrate is then planarized, thus forming shallow and deep trench isolation structures in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.